Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

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Qtà RoHS
ROHM Semiconductor MOSFET HSOP8 100V 100A
Scheda dati
1.297A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 200V 5A SM SKY BARRI
Scheda dati
4.880A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 60V(Vdss), 70A(Id), (4.5V Drive)
Scheda dati
1.963A magazzino
Min: 1
Mult.: 1

ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive)
Scheda dati
1.819A magazzino
Min: 1
Mult.: 1

ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 100V(Vdss), 70A(Id), (6.0V, 10V Drive)
Scheda dati
1.976A magazzino
Min: 1
Mult.: 1

ROHM Semiconductor MOSFET Transistor, MOSFET Nch, 100V(Vdss), 105A(Id), (6.0V, 10V Drive)
Scheda dati
1.939A magazzino
Min: 1
Mult.: 1

ROHM Semiconductor MOSFET Transistor, MOSFET Pch, -100V(Vdss), -120A(Id), (4.5V, 6.0V Drive)
Scheda dati
514A magazzino
Min: 1
Mult.: 1

ROHM Semiconductor MOSFET -100V 4.5A, Dual Pch+Pch, SOP8, Power MOSFET
Scheda dati
1.484A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor MOSFET SOP8 100V 4.5A N-CH MOSFET
Scheda dati
3.071A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor MOSFET 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
Scheda dati
4.733A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor MOSFET 100V 4.5A Dual Nch+Pch, SOP8, Power MOSFET
Scheda dati
1.728A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor MOSFET 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET
Scheda dati
14.706A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor MOSFET DFN 100V 2A DUAL CH
Scheda dati
17.338A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera
Scheda dati
7.578A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp
Scheda dati
7.594A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 12A SM SKY BARRI
Scheda dati
3.980A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 12A SM SKY BARRI
Scheda dati
3.668A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 15A SM SKY BARRI
Scheda dati
5.672A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 15A SM SKY BARRI
Scheda dati
4.095A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Scheda dati
4.820A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Scheda dati
1.900A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Scheda dati
1.972A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat
Scheda dati
2.000A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Scheda dati
1.988A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD: The YQ30NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe
Scheda dati
1.908A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000