TSCD 650V SiC Schottky Diodes

Taiwan Semiconductor TSCD 650V SiC Schottky Diodes feature a maximum junction temperature of +175°C and ensure robust performance under challenging conditions. Taiwan Semiconductor TSCD diodes have an MPS structure that enhances ruggedness to forward current surge events, making them suitable for high-demand scenarios. These diodes facilitate high-speed switching and boast a high forward surge capability, enabling efficient operation in various power supply systems. Additionally, the positive temperature coefficient on VF ensures stability across temperature ranges.

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Configurazione
If - Corrente diretta
Vrrm - Tensione inversa ripetitiva
Vf - Tensione diretta
Ifsm - Sovracorrente diretta
Ir - Corrente inversa
Temperatura di lavoro minima
Temperatura di lavoro massima
Confezione
Taiwan Semiconductor Diodi Schottky SiC 6A, 650V, SiC Schottky Diode
Scheda dati
984A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 6 A 650 V 1.32 V 44 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 8A, 650V, SiC Schottky Diode
Scheda dati
998A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 8 A 650 V 1.35 V 72 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 10A, 650V, SiC Schottky Diode
Scheda dati
1.000A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 10 A 650 V 1.34 V 84 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 12A, 650V, SiC Schottky Diode
Scheda dati
980A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 12 A 650 V 1.36 V 88 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 16A, 650V, SiC Schottky Diode
Scheda dati
1.000A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.38 V 100 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 20A, 650V, SiC Schottky Diode
Scheda dati
1.000A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.38 V 128 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 20A, 650V, SiC Schottky Diode
Scheda dati
290A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 20 A 650 V 1.34 V 88 A 20 uA Tube
Taiwan Semiconductor Diodi Schottky SiC 30A, 650V, SiC Schottky Diode
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 30 A 650 V 1.36 V 128 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 40A, 650V, SiC Schottky Diode
Scheda dati
273A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 40 A 650 V 1.33 V 140 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 6A, 650V, SiC Schottky Diode
Scheda dati
997A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 6 A 650 V 1.32 V 44 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 8A, 650V, SiC Schottky Diode
Scheda dati
848A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 8 A 650 V 1.35 V 72 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 10A, 650V, SiC Schottky Diode
Scheda dati
977A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 10 A 650 V 1.34 V 84 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 12A, 650V, SiC Schottky Diode
Scheda dati
1.000A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 12 A 650 V 1.65 V 88 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 16A, 650V, SiC Schottky Diode
Scheda dati
997A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 16 A 650 V 1.38 V 100 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 20A, 650V, SiC Schottky Diode
Scheda dati
985A magazzino
Min: 1
Mult.: 1

Through Hole TO-220AC-2 Single 20 A 650 V 1.38 V 128 A 20 uA - 55 C + 175 C Tube
Taiwan Semiconductor Diodi Schottky SiC 16A, 650V, SiC Schottky Diode
Scheda dati
200A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual Anode Common Cathode 16 A 650 V 1.33 V 68 A 20 uA - 55 C + 175 C Tube