N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
Nome commerciale
Confezione
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58.029A magazzino
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 50 A 9 mOhms - 20 V, 20 V 3 V 36 nC - 55 C + 175 C 71 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 120 A 2.3 mOhms - 20 V, 20 V 2 V 206 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
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Scheda dati
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Scheda dati
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Mult.: 1
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Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 90 A 2.1 mOhms - 20 V, 20 V 3 V 91 nC - 55 C + 175 C 150 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
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