MOSFET SiC 1200V/23MOSICFETG4TO247-4
UF4SC120023K4S
onsemi
1:
18,01 €
768 A magazzino
Codice Mouser
431-UF4SC120023K4S
onsemi
MOSFET SiC 1200V/23MOSICFETG4TO247-4
768 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
53 A
29 mOhms
- 20 V, + 20 V
6 V
37.8 nC
- 55 C
+ 175 C
385 W
Enhancement
SiC FET
MOSFET SiC 1200V/53MOSICFETG4TO247-3
UF4C120053K3S
onsemi
1:
13,00 €
678 A magazzino
Codice Mouser
431-UF4C120053K3S
onsemi
MOSFET SiC 1200V/53MOSICFETG4TO247-3
678 A magazzino
1
13,00 €
10
7,98 €
100
7,06 €
Acquista
Min: 1
Mult.: 1
Dettagli
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
34 A
67 mOhms
- 20 V, + 20 V
6 V
- 55 C
+ 175 C
263 W
SiC FET
MOSFET SiC 1200V/53MOSICFETG4TO263-7
UF4C120053B7S
onsemi
1:
12,26 €
747 A magazzino
Nuovo prodotto
Codice Mouser
772-UF4C120053B7S
Nuovo prodotto
onsemi
MOSFET SiC 1200V/53MOSICFETG4TO263-7
747 A magazzino
1
12,26 €
10
9,03 €
100
8,15 €
800
7,61 €
Acquista
Min: 1
Mult.: 1
Dettagli
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
34 A
53 mOhms
- 20 V, + 20 V
6 V
37.8 nC
- 55 C
+ 175 C
250 W
Enhancement
SiC FET
MOSFET SiC 1200V/70MOSICFETG4TO263-7
UF4C120070B7S
onsemi
1:
10,59 €
513 A magazzino
Nuovo prodotto
Codice Mouser
772-UF4C120070B7S
Nuovo prodotto
onsemi
MOSFET SiC 1200V/70MOSICFETG4TO263-7
513 A magazzino
1
10,59 €
10
7,77 €
100
6,79 €
800
6,33 €
Acquista
Min: 1
Mult.: 1
Dettagli
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
25.7 A
72 mOhms
- 20 V, + 20 V
6 V
- 55 C
+ 175 C
183 W
Enhancement
SiC FET
MOSFET SiC 1200V/30MOSICFETG4TO263-7
UF4SC120030B7S
onsemi
1:
17,22 €
692 A magazzino
Nuovo prodotto
Codice Mouser
772-UF4SC120030B7S
Nuovo prodotto
onsemi
MOSFET SiC 1200V/30MOSICFETG4TO263-7
692 A magazzino
1
17,22 €
10
14,81 €
800
11,41 €
Acquista
Min: 1
Mult.: 1
Dettagli
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
56 A
39 mOhms
- 20 V, + 20 V
6 V
37.8 nC
- 55 C
+ 175 C
341 W
Enhancement
SiC FET
MOSFET SiC 1200V/70MOSICFETG4TO247-3
UF4C120070K3S
onsemi
1:
11,31 €
674 A magazzino
Codice Mouser
431-UF4C120070K3S
onsemi
MOSFET SiC 1200V/70MOSICFETG4TO247-3
674 A magazzino
1
11,31 €
10
6,85 €
100
5,89 €
Acquista
Min: 1
Mult.: 1
Dettagli
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
27.5 A
91 mOhms
- 20 V, + 20 V
6 V
- 55 C
+ 175 C
217 W
SiC FET
MOSFET SiC 1200V/70MOSICFETG4TO247-4
UF4C120070K4S
onsemi
1:
11,61 €
416 A magazzino
Codice Mouser
431-UF4C120070K4S
onsemi
MOSFET SiC 1200V/70MOSICFETG4TO247-4
416 A magazzino
1
11,61 €
10
7,05 €
600
6,03 €
Acquista
Min: 1
Mult.: 1
Dettagli
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
27.5 A
91 mOhms
- 20 V, + 20 V
6 V
- 55 C
+ 175 C
217 W
SiC FET
MOSFET SiC 1200V/53MOSICFETG4TO247-4
UF4C120053K4S
onsemi
1:
14,81 €
81 A magazzino
600 20/07/2026 previsto
Codice Mouser
431-UF4C120053K4S
onsemi
MOSFET SiC 1200V/53MOSICFETG4TO247-4
81 A magazzino
600 20/07/2026 previsto
1
14,81 €
10
9,18 €
100
8,02 €
Acquista
Min: 1
Mult.: 1
Dettagli
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
34 A
67 mOhms
- 20 V, + 20 V
6 V
- 55 C
+ 175 C
263 W
SiC FET
MOSFET SiC UF4C120053B7S
UF4C120053B7SSR
onsemi
1:
13,36 €
200 A magazzino
Ordine speciale in fabbrica
Codice Mouser
772-UF4C120053B7SSR
Ordine speciale in fabbrica
onsemi
MOSFET SiC UF4C120053B7S
200 A magazzino
Acquista
Min: 1
Mult.: 1
Dettagli
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
34 A
53 mOhms
- 20 V, + 20 V
6 V
37.8 nC
- 55 C
+ 175 C
250 W
Enhancement
SiC FET
MOSFET SiC UF4C120070B7S
UF4C120070B7SSR
onsemi
1:
11,50 €
200 A magazzino
Ordine speciale in fabbrica
Codice Mouser
772-UF4C120070B7SSR
Ordine speciale in fabbrica
onsemi
MOSFET SiC UF4C120070B7S
200 A magazzino
1
11,50 €
10
8,58 €
100
7,42 €
600
Visualizza
600
7,03 €
1.000
5,97 €
Acquista
Min: 1
Mult.: 1
Dettagli
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
25.7 A
72 mOhms
- 20 V, + 20 V
6 V
- 55 C
+ 175 C
183 W
Enhancement
SiC FET
MOSFET SiC 1200V/30MOSICFETG4TO247-4
UF4SC120030K4S
onsemi
1:
19,66 €
2 A magazzino
Codice Mouser
431-UF4SC120030K4S
onsemi
MOSFET SiC 1200V/30MOSICFETG4TO247-4
2 A magazzino
1
19,66 €
10
15,78 €
120
13,94 €
Acquista
Min: 1
Mult.: 1
Dettagli
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
53 A
39 mOhms
- 20 V, + 20 V
6 V
37.8 nC
- 55 C
+ 175 C
341 W
Enhancement
SiC FET