Automotive-Grade N-Channel MDmesh DM2 MOSFETs

STMicroelectronics Automotive-Grade N-Channel MDmesh DM2 Power MOSFETs are high-voltage with very low recovery charge (Qrr) and time (trr) combined with low RDS(on). They are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Risultati: 13
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i 939A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 34 A 93 mOhms - 20 V, 20 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in 508A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 50 mOhms - 25 V, 25 V 4 V 27 nC - 55 C + 150 C 446 W Enhancement AEC-Q101 MDmesh Tube

STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET i 397A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 60 mOhms - 25 V, 25 V 4 V 90 nC - 55 C + 150 C 360 W Enhancement AEC-Q101 MDmesh Tube

STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i 482A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 4 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube

STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET i 662A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 87 mOhms - 25 V, 25 V 4 V 70 nC - 55 C + 150 C 300 W Enhancement AEC-Q101 MDmesh Tube

STMicroelectronics MOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i 454A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 65 mOhms - 25 V, 25 V 4 V 88 nC - 55 C + 150 C 360 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET i 4.775A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 400 V 38 A 72 mOhms - 25 V, 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET i 1.223A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 28 A 110 mOhms - 30 V, 30 V 4 V 54 nC - 55 C + 150 C 210 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET i 1.292A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 400 V 38 A 72 mOhms - 30 V, 30 V 4 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in 1.429A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 35 A 84 mOhms - 25 V, 25 V 4 V 57 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in 372A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 66 A 42 mOhms - 25 V, 25 V 4 V 121 nC - 55 C + 150 C 446 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i Tempo di consegna, se non a magazzino 16 settimane
Min: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms - 25 V, 25 V 4 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package Tempo di consegna, se non a magazzino 16 settimane
Min: 600
Mult.: 600

Si Through Hole N-Channel 1 Channel 650 V 33 A 91 mOhms - 25 V, 25 V 4.75 V 52.5 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube