Risultati: 137
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
STMicroelectronics MOSFET N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS 1.330A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 9 A 480 mOhms - 25 V, 25 V 3 V 17 nC - 55 C + 150 C 85 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II 1.037A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 5 A 790 mOhms - 25 V, 25 V 2 V 14 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V 0.27ohm 13A MDmesh 314A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 260 mOhms - 25 V, 25 V 3 V 35 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.124 Ohm 22 A MDmesh 229A magazzino
1.00006/04/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms 30 W MDmesh Tube
STMicroelectronics MOSFET N-Ch 600 Volt 11 Amp 306A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 450 mOhms - 30 V, 30 V 5 V 30 nC - 65 C + 150 C 160 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650 Volt 12 Amp 376A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 299 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh V 757A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.4 A 220 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V 0.27 ohm 13A MDmesh 913A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 260 mOhms - 25 V, 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 259A magazzino
1.00013/04/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 250 mOhms - 30 V, 30 V 3 V 56 nC - 65 C + 150 C 192 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 313A magazzino
1.00009/03/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 290 mOhms - 30 V, 30 V 3 V 54 nC - 65 C + 150 C 45 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch 212A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 17 A 162 mOhms - 25 V, 25 V 2 V 45 nC - 55 C + 150 C 125 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO 597A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 5 A 790 mOhms - 25 V, 25 V 2 V 14 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 600 V Mdmesh II Power 335A magazzino
60004/05/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 165 mOhms - 30 V, 30 V 2 V 60 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube

STMicroelectronics MOSFET POWER MOSFET N-CH 650V 22 A 15A magazzino
60009/03/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 139 mOhms - 25 V, 25 V 5 V 64 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650 V 0.124 Ohm 22 A MDmesh M5 600A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 13.9 A 148 mOhms - 25 V, 25 V 3 V 45 nC - 55 C + 150 C 150 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 600V 0.092V Ohm 29A MDmesh II PWR M 172A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31.5 A 105 mOhms - 25 V, 25 V 2 V 84 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
3.95116/03/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 3 V 82 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-Ch 650V 0.024 Ohm 84A MDMesh M5
2.97928/09/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 84 A 29 mOhms - 25 V, 25 V 3 V 204 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V 0.190 16A MDmesh 442A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 16 A 220 mOhms - 30 V, 30 V 3 V 44 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-CH 65V 33A MDMESH 44A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 79 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II MOS 1A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 17 A 168 mOhms - 30 V, 30 V 4 V 44 nC - 55 C + 150 C 125 W Enhancement MDmesh Tube
STMicroelectronics MOSFET POWER MOSFET N-CH Tempo di consegna 14 settimane
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11 A 360 mOhms - 25 V, 25 V 3 V 27 nC - 55 C + 150 C 90 W MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5 Tempo di consegna, se non a magazzino 14 settimane
Min: 1.000
Mult.: 1.000
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 18.3 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel
STMicroelectronics MOSFET POWER MOSFET N-CH 650V Tempo di consegna, se non a magazzino 14 settimane
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 27 A 85 mOhms - 25 V, 25 V 4 V 83 nC - 55 C + 150 C 160 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 650V 0.098 Ohm 29A MDMesh M5 MOS Tempo di consegna, se non a magazzino 14 settimane
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 28 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube