UJ3N Normally-On JFET Transistors

onsemi UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low RDS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes," giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.

Risultati: 5
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Configurazione Vds - Tensione di rottura drain-source Vgs - Tensione di rottura gate-source Corrente drain-source a Vgs=0 Id - corrente di drain continua Rds On - Drain-source sulla resistenza Pd - Dissipazione di potenza Temperatura di lavoro minima Temperatura di lavoro massima Serie Qualifica Confezione
onsemi JFET 650V/25MOSICJFETG3TO247-3 649A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 85 A 25 mOhms 441 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/35MOSICJFETG3TO247-3 604A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 63 A 35 mOhms 429 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 650V/80MOSICJFETG3TO247-3 563A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 650 V 20 V 32 A 80 mOhms 190 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/65MOSICJFETG3TO247-3 538A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV - 20 V to 3 V 5 uA 34 A 90 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube
onsemi JFET 1200V/70MOSICJFETG3TO247-3 516A magazzino
Min: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel Single 1.2 kV 20 V 33.5 A 70 mOhms 254 W - 55 C + 175 C UJ3N AEC-Q101 Tube