SRAM for Data Acquisition

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SRAM for Data Acquisition

SRAM stands for static random-access memory, a kind of memory chip that uses flip-flop type latching circuitry to store by the bit. SRAM can use very little power when sitting idle for long periods, and thus is better suited for certain applications over other types of memory. Learn More

Risultati: 488
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Dimensioni memoria Organizzazione Tempo di accesso Frequenza di clock massima Tipo di interfaccia Tensione di alimentazione - Max. Tensione di alimentazione - Min. Corrente di alimentazione - Max Temperatura di lavoro minima Temperatura di lavoro massima Stile di montaggio Package/involucro Confezione
ISSI SRAM 1Mb 2.4V-3.6V (10ns) 64K x 16 Async SRAM 112A magazzino
Min: 1
Mult.: 1

1 Mbit 64 k x 16 10 ns Parallel 3.6 V 2.4 V 25 mA - 40 C + 85 C SMD/SMT BGA-48
ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 20ns, 1.65v-2.2v, 48 Pin TSOP I, RoHS 65A magazzino
Min: 1
Mult.: 1

16 Mbit 1 M x 16 20 ns Parallel 2.2 V 1.65 V 90 mA - 40 C + 85 C SMD/SMT TSOP-48

ISSI SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,1.65V-2.2V, 10ns, 44 Pin TSOP II, RoHS 265A magazzino
27009/09/2026 previsto
Min: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 2.2 V 1.65 V 25 mA - 40 C + 85 C SMD/SMT TSOP-44
ISSI SRAM 256K (32K x 8) 20ns Async SRAM 3.3v 84A magazzino
Min: 1
Mult.: 1

256 kbit 32 k x 8 20 ns Parallel 3.63 V 2.97 V 25 mA - 40 C + 85 C SMD/SMT TSOP-28 Tray

ISSI SRAM 16Mb, Low Power/Power Saver,Async,1Mb x 16/2Mb x 8, 55ns, 2.2v-3.6v,48 Pin TSOP I, RoHS 76A magazzino
Min: 1
Mult.: 1

16 Mbit 1 M x 16 55 ns 3.6 V 2.2 V 12 mA - 40 C + 85 C SMD/SMT TSOP-48 Tray
ISSI SRAM 1Mb 128Kx8 12ns/3.3V Async SRAM 3.3v 91A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 12 ns Parallel 3.63 V 2.97 V 45 mA - 40 C + 85 C SMD/SMT sTSOP-32 Tray
ISSI SRAM 1M (128Kx8) 12ns 5V Async SRAM 480A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 12 ns Parallel 5.5 V 4.5 V 40 mA - 40 C + 85 C SMD/SMT sTSOP-32 Tray

ISSI SRAM 8Mb, Low Power/Power Saver,Async,512K x 16,45ns,2.2v-3.6v,44 Pin TSOP II, ECC, RoHS 174A magazzino
Min: 1
Mult.: 1

8 Mbit 512 k x 16 45 ns Parallel 3.6 V 2.2 V 35 mA - 40 C + 85 C SMD/SMT TSOP-44
ISSI SRAM 64K 8Kx8 10ns 5V Async SRAM 37A magazzino
23424/08/2026 previsto
Min: 1
Mult.: 1

64 kbit 8 k x 8 10 ns Parallel 5.25 V 4.75 V 50 mA - 40 C + 85 C SMD/SMT TSOP-28 Tray

ISSI SRAM 4Mb Low Pwr/Pwr Svr Async 512Kx8 8.45ns 125A magazzino
Min: 1
Mult.: 1

4 Mbit 512 k x 8 55 ns Parallel 2.2 V 1.65 V 22 mA - 40 C + 85 C SMD/SMT TSOP-32 Tube

ISSI SRAM 4Mb (256K x 16) 8ns Async SRAM 58A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 16 8 ns Parallel 3.63 V 2.97 V 45 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS 53A magazzino
48019/08/2026 previsto
Min: 1
Mult.: 1

8 Mbit 512 k x 16 10 ns Parallel 3.6 V 2.4 V 95 mA - 40 C + 85 C SMD/SMT TFBGA-48
ISSI SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS 250A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 2.4 V 35 mA - 40 C + 85 C SMD/SMT mBGA-48 Tray
ISSI SRAM 4Mb 256Kx16 55ns Async SRAM 198A magazzino
Min: 1
Mult.: 1

4 Mbit 256 k x 16 55 ns 18 MHz Parallel 3.6 V 2.5 V 10 mA - 40 C + 85 C SMD/SMT TFBGA-48 Tray
ISSI SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS 87A magazzino
Min: 1
Mult.: 1

8 Mbit 512 k x 16 10 ns Parallel 3.6 V 2.4 V 95 mA - 40 C + 85 C SMD/SMT TSOP-48

ISSI SRAM 512K, 2.4-3.6V, 10ns 32Kx16 Asynch SRAM 61A magazzino
Min: 1
Mult.: 1

32 kbit 32 k x 16 10 ns Parallel 3.6 V 2.4 V 55 mA - 40 C + 85 C SMD/SMT TSOP-44 Tube
ISSI SRAM 16Mb,High-Speed,Async,2Mbx8,10ns, 2.4v-3.6v, 54 Pin TSOP II, RoHS 104A magazzino
Min: 1
Mult.: 1

16 Mbit 2 M x 8 10 ns Parallel 3.6 V 2.4 V 90 mA - 40 C + 85 C SMD/SMT TSOP-II-54
ISSI SRAM 2Mb 128Kx16 55ns Async SRAM 376A magazzino
Min: 1
Mult.: 1

2 Mbit 128 k x 16 55 ns Parallel 3.6 V 2.5 V 3 mA - 40 C + 85 C SMD/SMT BGA-48 Tray

ISSI SRAM 1Mb 128Kx8 12ns 5v Async SRAM 187A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 12 ns Parallel 5.5 V 4.5 V 40 mA - 40 C + 85 C SMD/SMT TSOP-32 Tray

ISSI SRAM 2Mb,High-Speed,Async,128K x 16,12ns/3.3v, or 15ns/2.5V-3.6V, 44 Pin TSOP II, RoHS 178A magazzino
Min: 1
Mult.: 1

2 Mbit 128 k x 16 12 ns Parallel 3.63 V 2.97 V 40 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
ISSI SRAM 1M, 2.4V-3.6V, 10ns LP Async SRAM 273A magazzino
Min: 1
Mult.: 1

1 Mbit 128 k x 8 10 ns Parallel 3.6 V 2.4 V 25 mA - 40 C + 85 C SMD/SMT sTSOP-32 Tray
ISSI SRAM 2Mb, Low Power/Power Saver,Async,256K x 8,45ns,2.2v-3.6v,32 Pin sTSOP I (8x13.4mm), RoHS 234A magazzino
Min: 1
Mult.: 1

2 Mbit 256 k x 8 45 ns Parallel 3.6 V 2.2 V 18 mA - 40 C + 85 C SMD/SMT sTSOP-32

ISSI SRAM 8M (1Mx8) 55ns Async SRAM 5v 105A magazzino
Min: 1
Mult.: 1

8 Mbit 1 M x 8 55 ns Parallel 5.5 V 4.5 V 25 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
ISSI SRAM 8Mb 1Mbx8 55ns Async SRAM 164A magazzino
Min: 1
Mult.: 1

8 Mbit 1 M x 8 55 ns Parallel 3.6 V 2.5 V 35 mA - 40 C + 85 C SMD/SMT TFBGA-48 Tray
ISSI SRAM 8Mb,Pipeline,Sync,512K x 18,200Mhz,3.3v I/O,100 Pin TQFP, 3CE, RoHS 15A magazzino
Min: 1
Mult.: 1

9 Mbit 512 k x 18 3.1 ns 200 MHz Parallel 3.465 V 3.135 V 275 mA - 40 C + 85 C SMD/SMT TQFP-100 Tube