π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.

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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Confezione
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) MOQ=2000 PD=80W F=1MHZ
Scheda dati
3.371A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 4.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN
Scheda dati
3.324A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3P N-Channel 1 Channel 900 V 9 A 1.3 Ohms - 30 V, 30 V 2.5 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
Scheda dati
13A magazzino
15002/03/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN
Scheda dati
64A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 800 V 10 A 700 mOhms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 250 W Enhancement MOSVIII Tray
Toshiba MOSFET TO252 900V 2A N-CH MOSFET
Scheda dati
2.125A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 900 V 2 A 5.9 Ohms - 30 V, 30 V 2.5 V 12 nC - 55 C + 150 C 80 W Enhancement MOSVIII Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ
Scheda dati
40A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 2.5 A 4.6 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET Pb-FPOWERMOSFETTRANSISTORTO-220SISPD=35WF=1MHZ
Scheda dati
290A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 3.5 Ohms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 35 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS
Scheda dati
159A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 1.35 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS
Scheda dati
204A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 45 W Enhancement MOSVIII Tube
Toshiba MOSFET PLN MOS 900V 2000m (VGS=10V) TO-3PN
Scheda dati
72A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 900 V 7 A 1.6 Ohms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 200 W Enhancement MOSVIII Tray
Toshiba MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS
Scheda dati
313A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 9 A 1 Ohms - 30 V, 30 V 4 V 46 nC - 55 C + 150 C 50 W Enhancement MOSVIII Tube