Tutti i risultati (2.317)

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ROHM Semiconductor Diodi Schottky SiC RECT 1.2KV 5A SM SIC SKY 473A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi Schottky SiC RECT 650V 15A SM SIC SKY 460A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi di protezione ESD/Diodi TVS 13V 600W, Highly Reliable, Transient Voltage Suppressor 3.000A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi di protezione ESD/Diodi TVS 30V 600W, Highly Reliable, Transient Voltage Suppressor 1.818A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi di protezione ESD/Diodi TVS 5V 600W, Highly Reliable, Transient Voltage Suppressor 2.890A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 8A SM SKY BARRI 2.932A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 2A SM SKY BARRI 5.857A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 150V 5A SM SKY BARRI 7.587A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 150V 5A SM SKY BARRI 7.390A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 10A SM SKY BARRI 7.480A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 150V 10A SM SKY BARRI 2.957A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Low V<sub>F</sub>, 30V, 500mA, DFN1006-2W, Schottky Barrier Diode for Automotive: RB550ASA-30FH is low VF and high reliability Schottky Barrier Diode, suitable for general rectification. It is a highly reliable product for automotive. 14.548A magazzino
Min: 1
Mult.: 1
Nastrati: 8.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 60V 3A SM SKY BARRI 5.880A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

ROHM Semiconductor Diodi Schottky SiC RECT 1.2KV 15A RDL SIC SKY 782A magazzino
Min: 1
Mult.: 1

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera 7.353A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temp 7.594A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 12A SM SKY BARRI 3.980A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 12A SM SKY BARRI 3.668A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 15A SM SKY BARRI 5.672A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky RECT 100V 15A SM SKY BARRI 4.095A magazzino
Min: 1
Mult.: 1
Nastrati: 4.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD: The YQ20BGE10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 4.820A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1.900A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10CD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1.970A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 2.000A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

ROHM Semiconductor Diodi e raddrizzatori Schottky Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD: The YQ20NL10SE is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high tempe 1.988A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000