Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
APC-E MOSFET SiC 650V 50mR, TO-247-4L, Industrial Grade
Scheda dati
288A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E MOSFET SiC 1200V 75mR, TO-247-4L, Automotive Grade
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E MOSFET SiC 1200V 75mR, TO-247-4L, Industrial Grade
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E MOSFET SiC 650V 50mR, TO-247-4L, Automotive Grade
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E MOSFET SiC 650V 27mR, TO-247-4L, Automotive Grade
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E MOSFET SiC 1200V 30mR, TO-247-4L, Automotive Grade
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E MOSFET SiC 1200V 13mR, TO247-4L, Industrial Grade
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E MOSFET SiC 1200V 13mR, TO247-4L, Automotive Grade
Scheda dati
300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E MOSFET SiC 650V 27mR, SAPKG-9L, Automotive Grade
Scheda dati
60028/08/2026 previsto
Min: 1
Mult.: 1
Nastrati: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E MOSFET SiC 650V 35mR, TO-247-4L, Automotive Grade
30003/04/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-4L 650 V
APC-E MOSFET SiC 1200V 20mR, TO-247-4L, Industrial Grade
Scheda dati
30003/04/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E MOSFET SiC 650V 27mR, TO-247-4L, Industrial Grade
Scheda dati
30027/03/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E MOSFET SiC 1200V 30mR, TO-247-4L, Industrial Grade
Scheda dati
30027/03/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E MOSFET SiC 650V 65mR, TO-247-3L, Automotive Grade
30001/05/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E MOSFET SiC 650V 35mR, TO-247-4L, Industrial Grade
30003/04/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-4L 650 V

APC-E MOSFET SiC 650V 65mR, TO-247-3L, Industrial Grade
30001/05/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E MOSFET SiC 1700V 1000mR, TO247-3L, Industrial Grade
Scheda dati
30027/03/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E MOSFET SiC 1200V 75mR, TO247-4L, Automotive Grade
Scheda dati
Tempo di consegna, se non a magazzino 15 settimane
Min: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E MOSFET SiC 1200V 32mR, TO247-4L, Industrial Grade
Scheda dati
Tempo di consegna, se non a magazzino 15 settimane
Min: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E MOSFET SiC 1200V 75mR, TO247-4L, Industrial Grade
Scheda dati
Tempo di consegna, se non a magazzino 15 settimane
Min: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C