UF3C SiC FETs

onsemi UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The onsemi UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D2PAK-3, D2PAK-7, D2PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
Nome commerciale
onsemi MOSFET SiC 650V/40MOSICFETG3TO247-4
Scheda dati
3.300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO247-4
Scheda dati
308A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247-4
Scheda dati
581A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO220-3
Scheda dati
902A magazzino
Min: 1
Mult.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO247-3
Scheda dati
1.224A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO247-4
Scheda dati
666A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO24
Scheda dati
229A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO263-7
Scheda dati
713A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO263-3
Scheda dati
453A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 65 A 27 mOhms - 25 V, + 25 V 4 V 51 nC - 25 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO263-3
Scheda dati
1.252A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO247-3
Scheda dati
1.117A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO263-7
Scheda dati
200A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 27 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 136.4 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/400MOSICFETG3TO247-3
Scheda dati
258A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/400MOSICFETG3TO263-7
Scheda dati
1.232A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 5.9 A 410 mOhms - 25 V, + 25 V 6 V 22.5 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi MOSFET SiC 1700V/400MOSICFETG3TO263-7
Scheda dati
26A magazzino
1.600In ordine
MouseReel disponibile
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO247-3
Scheda dati
120A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247-3
Scheda dati
664A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO220-3
Scheda dati
507A magazzino
Min: 1
Mult.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/150MOSICFETG3TO263-7
Scheda dati
377A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi MOSFET SiC 1700V/400MOSICFETG3TO247-3
Scheda dati
716A magazzino
60012/08/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 7.6 A 1.07 Ohms - 25 V, + 25 V 6 V 27.5 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO263-3
Scheda dati
191A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 800

SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 41 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 176 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO247-4
Scheda dati
31A magazzino
60016/10/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/150MOSICFETG3TO247-4
Scheda dati
64A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18.4 A 330 mOhms - 25 V, + 25 V 3.5 V 25.7 nC - 55 C + 175 C 166.7 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO220-3
Scheda dati
Tempo di consegna, se non a magazzino 34 settimane
Min: 1
Mult.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET